symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 24 30 53 64 r q jc 2.6 3.5 2 w t a =70c 1.3 w junction and storage temperature range a p d c 35 14 -55 to 150 t c =100c i d continuous drain current bj maximum units parameter t c =25c t c =100c 30 maximum junction-to-ambient a steady-state 24 19 120 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted vv 12 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w a repetitive avalanche energy l=0.3mh c 135 mj a t a =70c 8 continuous drain current h t a =25c i dsm 10 AON6410 30v n-channel mosfet product summary v ds (v) = 30v i d = 24a (v gs = 10v) r ds(on) < 12m w (v gs = 10v) r ds(on) < 14m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AON6410 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. g ds top view 1 2 3 4 8 7 6 5 pin1 dfn5x6 top view bottom view alpha & omega semiconductor, ltd. www.aosmd.com
AON6410 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.5 2.5 v i d(on) 120 a 10 12 t j =125c 16 19 11.5 14 m w g fs 49 s v sd 0.72 1.0 v i s 35 a c iss 1210 1452 pf c oss 330 pf c rss 85 pf r g 1.1 1.6 w q g (10v) 22 28 nc q g (4.5v) 10 13 nc q gs 3.7 nc q gd 2.7 nc t d(on) 10 ns t r 6.3 ns t d(off) 21 ns t f 2.8 ns t rr 36 45 ns q rr 47 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =10a i s =1a,v gs =0v v ds =5v, i d =20a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s a: the value of r ja is measured with the device in a still air enviro nment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. h. surface mounted on a 1 in 2 fr-4 board with 2oz. copper. j. maximum current is limited by bonding wire. rev8: march 2011 alpha & omega semiconductor, ltd. www.aosmd.com
AON6410 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 0 20 40 60 80 100 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 8 9 10 11 12 13 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 5 30 55 80 105 130 155 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =4.5v v gs =10v 5 10 15 20 25 30 35 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AON6410 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 10 100 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max ) =150c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com
AON6410 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =64c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AON6410 #div/0! #div/0! #div/0! #div/0! - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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